| PART |
Description |
Maker |
| RH101 RH103 RH105 |
Voltage 100V ~ 800V 0.8 Amp Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| IRF620B IRF620BFP001 IRFS620BFP001 |
200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A
200V N-Channel B-FET / Substitute of IRF620 & IRF620A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| ERC20 |
FAST RECOVERY DIODE( 200V to 800V / 5A )
|
FUJI[Fuji Electric]
|
| SCD5393S |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| S10GBU80-C S10GBU40-C S10GBU20-C S10GBU60-C S10GBU |
Voltage 200V ~800V 100Amp Glass Passivited Bridge Rectifers
10.0Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| 2SC3151 2SC3151M 2SC3151L |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 800V的五（巴西）总裁| 1.5AI（丙）|18VAR
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 1.5A I(C) | TO-218VAR
For Switching Regulators
|
Honeywell International, Inc.
SANYO[Sanyo Semicon Device]
|
| SPP06N80C3 SPA06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| FQD12N20TF |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQD4N20TM |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
